ICP CVD Dual-Chamber System

High-density ICP-CVD dual-chamber deposition system designed for SiN, SiO₂ and a-Si thin-film growth. The platform supports uniform and repeatable deposition for semiconductor, photovoltaic, and advanced materials manufacturing.

High-density ICP for uniform films.
Dual-chamber design for increased throughput.
Versatile deposition for SiN, SiO2, a-Si.

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Tech Specs

System Type	Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD)
Configuration	Dual-chamber design for parallel processing and higher throughput
Target Films	Silicon nitride (SiN), silicon dioxide (SiO2), amorphous silicon (a-Si) and composite deposits
Main Components	Reaction chambers, vacuum system, gas delivery system, RF power supply, and integrated control system
Plasma Source	Inductive RF excitation producing high-density plasma and abundant reactive species
Primary Functions	Thin-film deposition and composite material growth through controlled plasma-assisted chemical vapor deposition processes.

Key Features

Dual-Chamber Throughput Design

Dual-chamber architecture supports parallel processing or staged workflows to increase productivity while minimizing cross-contamination and downtime between runs.
Broad Material Compatibility

Engineered for SiN, SiO2, a-Si and specialty composite deposits, the system handles diverse precursor chemistries for semiconductor, photovoltaic and coating applications.
Integrated Vacuum And Gas Controls

Precision vacuum and gas delivery subsystems maintain stable process conditions and repeatability, ensuring uniform film thickness, stoichiometry and reduced defectivity.
Stable RF Power And Process Control

Robust RF power supply and closed-loop control enable consistent plasma conditions and repeatable deposition recipes for high-yield production and R&D tasks.
Application-Focused Flexibility

Modular architecture supports recipe customization and process tuning for applications including semiconductor passivation, solar cell fabrication and advanced thin-film materials.
High-Density Plasma Generation

The inductively coupled RF source generates high-density plasma with abundant reactive species, enabling fast and conformal thin-film deposition with consistent material quality across substrates.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

Energetic plasma species interact with surface molecules and contaminants under controlled vacuum conditions.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.