ICP Inductively Coupled Etcher

The ICP inductively coupled plasma etcher integrates dual RF sources to deliver controlled, high-uniformity etching across dielectric, metal, and compound semiconductor materials. The dual-chamber configuration enhances contamination control and supports stable operation in semiconductor manufacturing environments.

High-density plasma for fast, uniform etching.
Dual RF power for precise ion energy control.
Pre-vacuum and reaction chambers reduce contamination.

Get A Quote Tech Specs

Tech Specs

Plasma Type	Inductively Coupled Plasma (ICP)
RF Sources	Inductive RF generator for plasma + RF substrate bias generator
Chamber Configuration	Pre-vacuum chamber and reaction chamber for contamination control
Main Components	Reaction chamber, upper and lower electrodes, RF sources, vacuum system, gas control, cooling system, backside helium control, control software
Process Gases	Configurable gas delivery for fluorine-, chlorine-, oxygen-based chemistries
Cooling System	Closed-loop refrigeration for wafer and system temperature stability
Backside Helium Control	Integrated He backfill and control for thermal conduction and chucking
Control & Software	Recipe management, process monitoring, operator interface and automation support
Target Materials	Oxides, nitrides, metals and III-V compound semiconductors (e.g., SiO₂, Si₃N₄, Al, GaAs)

Key Features

High-density Inductive Plasma Generation

Uses inductive coupling with dual RF power to maintain stable plasma density and consistent etching performance across a wide range of semiconductor materials.
Dual RF Power Control System

Independent inductive and substrate RF power supplies allow precise control over ion energy and plasma density, enabling precise control of ion energy and plasma conditions for stable and repeatable semiconductor processing.
Dual-chamber Contamination Control

Pre-vacuum and reaction chambers minimize exposure to ambient contaminants and speed wafer transfer, improving yield and operator safety while maintaining a clean environment for high-throughput processes.
Backside Helium Thermal Management

Integrated backside helium control and an active cooling system maintain wafer temperature uniformity during long etch cycles, preventing thermal drift and ensuring stable wafer temperature control and consistent processing performance across production batches.
Comprehensive Process Gas Handling

Advanced gas delivery, metering and control support a wide range of etch chemistries with high stability, enabling flexible process development from dielectric patterning to metal and III-V etching.
Intuitive Software and Automation

User-friendly control software with recipe management, process monitoring and automation interfaces streamlines setup, reduces operator variability, and supports integration into fab MES and automation systems.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

Energetic plasma species interact with surface molecules and contaminants under controlled vacuum conditions.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.