ICP Plasma Residue Removal System

The PD-200 ICP plasma residue removal system integrates a 13.56 MHz RF source (up to 2 kW) for controlled photoresist stripping and residue removal in semiconductor processes. It supports multi-wafer handling, precise temperature control up to 250°C, and uniformity ≤5% for stable production performance.

High-power RF 13.56 MHz plasma for fast ashing
Temperature control 50–250°C for versatile processes
Multi-wafer handling for 2/4" wafer throughput

Get A Quote Tech Specs

Tech Specs

Model	PD-200
Plasma Source	RF 13.56 MHz
RF Power	2 kW
Applicable Wafer Sizes	2", 4", 6", 8"
Batch Handling	Multi-wafer (only for 2" and 4" wafers)
Dimensions (L×W×H)	673 × 1455 × 1695 mm
Chamber Configuration	Transfer chamber + process chamber
Process Temperature Control	50–250 °C
Uniformity	≤5% (edge excluded 10 mm, 5-point measurement)
Plasma PR Removal	≤90 °C; 50–100 nm/min; uniformity ≤5% (5-region test)
High-temperature Ashing	≤250 °C; 3000–5000 nm/min; uniformity ≤5% (5-region test)
System Control	FR control system (FR system / FangRui)
Automation Level	Manual + semi-automatic
Electrode Cooling / Chiller	Electrode cooling FR-600A-H

Key Features

High-Power RF Plasma Source

The PD-200 features a 13.56 MHz RF plasma source delivering up to 2 kW power, enabling stable and controllable residue removal across low-temperature cleaning and high-temperature process conditions.
Wide Temperature Process Control

Integrated temperature control spans 50–250 °C, supporting a wide range of temperature-controlled processes with stable performance and repeatable results across different production requirements.
Multi-Wafer High Throughput

Designed for multi-wafer processing (2" and 4"), PD-200 increases throughput for small-diameter production while maintaining process uniformity and minimal cycle-to-cycle variation.
Superior Uniformity and Repeatability

Process uniformity is tightly controlled to ≤5% (measured 5 points, edge excluded), ensuring stable process consistency and reliable output across repeated production cycles.
Dual-Chamber Transfer Architecture

The system uses a transfer chamber plus a dedicated process chamber to isolate handling and process steps, reducing contamination risks and improving process integration for fab environments.
User-Friendly Control Interface

Equipped with an FR control system, the PD-200 provides intuitive operation, recipe management and semi-automated workflows to streamline operator tasks and minimize setup errors.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

Energetic plasma species interact with surface molecules and contaminants under controlled vacuum conditions.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.