{"id":291,"date":"2025-12-10T03:46:08","date_gmt":"2025-12-10T03:46:08","guid":{"rendered":"https:\/\/www.fariplasmatech.com\/product\/pe-200-rie-reactive-ion-etcher\/"},"modified":"2026-03-17T11:32:25","modified_gmt":"2026-03-17T03:32:25","slug":"pe-200-rie-reactive-ion-etcher","status":"publish","type":"product","link":"https:\/\/www.fariplasmatech.com\/ko\/product\/pe-200-rie-reactive-ion-etcher\/","title":{"rendered":"PE-200 RIE Reactive Ion Etcher"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"

The PE-200 RIE system is designed for precise reactive ion etching in semiconductor fabrication. It supports controlled processing of silicon, SiN, SiO2, and advanced microstructures with stable plasma conditions and repeatable performance.<\/p>\n","protected":false},"featured_media":325,"template":"","meta":{"inline_featured_image":false},"products":[30],"class_list":["post-291","product","type-product","status-publish","has-post-thumbnail","hentry","products-semiconductor-plasma-equipment"],"yoast_head":"\nPE-200 Reactive Ion Etcher | Fari Plasma<\/title>\n<meta name=\"description\" content=\"The PE-200 RIE system delivers precise reactive ion etching for silicon, SiN, and SiO2 \u2014 up to 200 mm wafers, 1000 W RF power, and stable sub-5\u00d710\u207b\u00b3 Pa vacuum. Built for R&D and production.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.fariplasmatech.com\/ko\/product\/pe-200-rie-reactive-ion-etcher\/\" \/>\n<meta property=\"og:locale\" content=\"ko_KR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"PE-200 Reactive Ion Etcher | Fari Plasma\" \/>\n<meta property=\"og:description\" content=\"The PE-200 RIE system delivers precise reactive ion etching for silicon, SiN, and SiO2 \u2014 up to 200 mm wafers, 1000 W RF power, and stable sub-5\u00d710\u207b\u00b3 Pa vacuum. 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