USC Dry Ultrasonic Dust Cleaning System

The USC dry ultrasonic dust cleaning system is designed for non-contact removal of fine particles from sensitive substrates. It uses ultrasonic vibration combined with controlled airflow to detach and evacuate micron-level dust without liquids, chemicals, or mechanical contact. The system is suitable for precision components where surface integrity and dimensional accuracy must be preserved.

Non-contact dry cleaning for delicate and precision surfaces
Effective removal of micron-scale particles without liquid processes
No impact on film thickness, geometry, or surface structure
Lower operating cost compared with wet cleaning methods

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Tech Specs

Model	Effective Width (mm)	Inlet Air (P)		Suction (V)
Model	Effective Width (mm)	Pressure (kPa)	Flow Rate (m³/h)	Pressure (kPa)	Flow Rate (m³/h)
2UV / U2V	100	18	210	-3	230
	200	18	260	-3	280
	300	18	320	-3	350
	400	18	380	-3	420
Operating Voltage	380V AC
Facility Air Pressure	10–28 kPa
Distance from Dust Removal Unit to Workpiece	≤5 mm (recommended 1.5 mm)
Removal Efficiency	97% for 1.6 µm silicon dust; 98% for 2.6 µm silicon dust
Monitoring Functions	Air pressure, temperature, filter cartridge, fan status
Outlet Air Temperature	<50°C
Noise Level	<85 dB
Operating Environment	Cleanroom below Class 10,000; exhaust pipe reserved: Ø65 mm

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Key Features

Non-Contact Cleaning

The system removes particles without physical contact, reducing the risk of scratches, deformation, or mechanical damage on sensitive surfaces.
No Thickness or Structure Impact

Dry ultrasonic cleaning does not alter film thickness, microstructures, or dimensional accuracy, making it suitable for precision components and patterned surfaces.
Reduced Material Loss

By avoiding abrasive contact and liquid erosion, the process minimizes material loss and supports stable yield in precision manufacturing.
Lower Operating Cost

The dry process eliminates water treatment, chemical consumption, and drying steps, helping reduce overall operating and maintenance costs.

Application

Semiconductors & Electronics

Plasma cleaning removes micro-contaminants and activates delicate surfaces for reliable wire bonding, encapsulation, chip packaging, and PCB manufacturing.

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Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

High-energy plasma species reach the material surface and interact with contaminants at the molecular level.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.