FR-G800 Dual-Chamber RIE Etcher

The FR-G800 Dual-Chamber RIE Etcher is a reactive ion etching system for semiconductor and microfabrication, delivering high-precision anisotropic etching for wafers from 2″ to 8″ with tight temperature control.

High-precision anisotropic etching for fine patterns
Dual-chamber design for improved throughput
Wide temperature control range: -20°C to 100°C

Get A Quote Tech Specs

Tech Specs

Model	FR-G800 (RIE)
Process Type	Reactive Ion Etching (RIE)
Chambers	Dual-chamber configuration
Temperature Range	-20°C to 100°C
Wafer Sizes Supported	2, 3, 4, 6, 8 inch

Key Features

Precision Anisotropic Microlithography Etching

Delivers high anisotropy and nanoscale resolution for pattern transfer on semiconductor wafers, enabling precise feature definition with minimal lateral etch and excellent profile control.
High Selectivity and Etch Uniformity

Optimized plasma chemistry and process control ensure strong material selectivity and uniform etch rates across the wafer, reducing variation and improving overall device yield.
Dual-Chamber Design for High Throughput

Dual independent chambers allow parallel processing or rapid cassette swaps to increase throughput while maintaining process isolation and reducing cross-contamination between jobs.
Wide Temperature Control Range

Integrated wafer temperature control from -20°C to 100°C supports diverse process recipes, enabling stable etch conditions for temperature-sensitive materials and advanced process tuning.
Supports Multiple Wafer Sizes

Flexible hardware accommodates 2-, 3-, 4-, 6- and 8-inch wafers, simplifying integration into mixed-line production and R&D environments without extensive reconfiguration.
User-Friendly HMI and Easy Maintenance

Intuitive control interface and modular component layout simplify recipe management, diagnostics and routine maintenance, reducing downtime and operator training time.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

High-energy plasma species reach the material surface and interact with contaminants at the molecular level.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.