FR-G800 Dual-Chamber RIE Etcher

The FR-G800 Dual-Chamber RIE Etcher is designed for high-precision reactive ion etching in semiconductor fabrication. It delivers stable anisotropic etching for wafers from 2″ to 8″ with controlled temperature and process consistency.

High-precision anisotropic etching for fine patterns
Dual-chamber design for improved throughput
Wide temperature control range: -20°C to 100°C

Get A Quote Tech Specs

Tech Specs

Model	FR-G800 (RIE)
Process Type	Reactive Ion Etching (RIE)
Chambers	Dual-chamber configuration
Temperature Range	-20°C to 100°C
Wafer Sizes Supported	2, 3, 4, 6, 8 inch

Key Features

Precision Anisotropic Microlithography Etching

Delivers high anisotropy and nanoscale resolution for pattern transfer on semiconductor wafers, ensuring stable etching performance and consistent feature definition across different wafer types and process conditions.
High Selectivity and Etch Uniformity

Optimized plasma chemistry and process control ensure strong material selectivity and uniform etch rates across the wafer.
Dual-Chamber Design for High Throughput

Dual independent chambers enable parallel processing or rapid cassette exchange, increasing throughput while maintaining process isolation and stable chamber conditions.
Wide Temperature Control Range

Integrated wafer temperature control from -20°C to 100°C supports diverse process requirements, enabling stable etching conditions for temperature-sensitive materials.
Supports Multiple Wafer Sizes

Flexible hardware accommodates 2-, 3-, 4-, 6-, and 8-inch wafers, simplifying integration into mixed production lines and R&D environments without extensive reconfiguration.
User-Friendly HMI and Easy Maintenance

An intuitive control interface and modular component layout simplify recipe management, diagnostics, and routine maintenance, reducing downtime and operator training requirements.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

Energetic plasma species interact with surface molecules and contaminants under controlled vacuum conditions.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.