GD-20RF Plasma Asher

GD-20RF is a single-chamber plasma ashing system designed for controlled photoresist stripping and dry residue removal in semiconductor and microfabrication processes. It provides stable plasma operation with recipe-driven control and configurable gas chemistry to support sensitive films and complex device structures.

Production-grade plasma ashing for consistent photoresist stripping with stable and repeatable process performance
Controlled process window to support sensitive layers while maintaining removal efficiency
Recipe-based PLC operation to standardize runs across operators and improve traceability
Strong capability on complex geometries where wet methods can struggle with coverage

Get A Quote Tech Specs

Tech Specs

Model	GD-20RF
Equipment Type	Plasma Asher
Chamber	Single chamber
Plasma Source	RF plasma
Process Gases	O₂, N₂, Ar, CF₄, H₂, mixed gases, custom
RF Power	TBD
Process Pressure	TBD
Temperature Control	TBD
Uniformity	TBD
Supported Substrates	TBD
Control System	PLC and touchscreen
Utilities	Power, compressed air, vacuum, process gas
Equipment Size	TBD

Download Brochure

Key Features

High-Rate Photoresist Stripping

Provides stable plasma ashing performance for controlled photoresist removal within standardized semiconductor process workflows.
Controlled Cleaning for Sensitive Films

Enables precise process window control to protect sensitive layers while maintaining consistent stripping performance.
Recipe-Based PLC Operation

Uses PLC and touchscreen control for recipe setup, parameter management, and consistent results across shifts.
Flexible Gas Chemistry Options

Works with multiple gas choices and mixed recipes to match different resist types, residues, and film stacks.
Improved Coverage on Complex Structures

Helps treat 3D features and difficult geometries where wet stripping can suffer from diffusion and wetting limits.
Cleaner Process With Reduced Chemical Use

Uses a dry process approach that can reduce reliance on wet chemicals and simplify handling in many lines.

Application

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

Energetic plasma species interact with surface molecules and contaminants under controlled vacuum conditions.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.