FR-G800 Dual-Chamber PECVD System

FR-G800 PECVD is a dual-chamber plasma-enhanced CVD system for low-temperature deposition of high-quality dielectric and optical thin films. It supports 2–8" wafers and broad R&D and production needs.

High-quality dielectric and optical film deposition
Dual-chamber configuration for throughput and process isolation
Wide wafer support (2–8") and 100–400°C process range

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Tech Specs

Process Type	PECVD (Plasma Enhanced Chemical Vapor Deposition)
Model	FR-G800
Chamber Configuration	Dual-chamber
Temperature Range	100–400 °C
Wafer Sizes Supported	2, 3, 4, 6, 8 inch
Discharge Methods	DC / AC / RF / Microwave / ECR
Typical Deposited Materials	Dielectric and optical thin films (e.g., SiOx, SiNx, low-k materials)
Primary Applications	Semiconductors, photonics, photovoltaics, biomedical devices

Key Features

Dual-Chamber Low-Temperature PECVD Deposition

A dual-chamber layout allows parallel processing and isolation between load/unload and process chambers, enabling continuous throughput while maintaining low-temperature deposition for thermally sensitive substrates.
Versatile Wafer Size Compatibility

Supports multiple wafer sizes (2, 3, 4, 6, 8 inches) to accommodate R&D and small-to-medium production runs across diverse semiconductor and photonics manufacturing workflows.
High-Quality Dielectric & Optical Films

Engineered for dense, low-defect dielectric and optical coatings, the system produces films with strong adhesion and controlled properties suitable for photonic devices, passivation, and encapsulation.
Comprehensive Plasma Control & Uniformity

Multiple discharge methods (RF, microwave, ECR, DC/AC) and precise process control deliver uniform plasma conditions for repeatable film stoichiometry, thickness control, and low defectivity across the substrate.
Low Thermal Budget, High Adhesion Performance

Low-temperature process capability minimizes thermal stress on substrates and components while improving film adhesion and density, making it suitable for temperature-sensitive materials and heterogeneous stacks.
Scalable Design for Diverse Industries

Modular, dual-chamber architecture and adaptable process recipes support applications across semiconductors, photovoltaics, biomedical devices, and advanced optics with straightforward scalability.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

High-energy plasma species reach the material surface and interact with contaminants at the molecular level.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.