FR-G800 Dual-Chamber PECVD System

The FR-G800 PECVD system is a dual-chamber plasma-enhanced CVD platform designed for low-temperature deposition of dielectric and optical thin films. It supports 2–8" wafers and provides stable process control for both R&D and production environments.

High-quality dielectric and optical film deposition
Dual-chamber configuration for throughput and process isolation
Wide wafer support (2–8") and 100–400°C process range

Get A Quote Tech Specs

Tech Specs

Process Type	PECVD (Plasma Enhanced Chemical Vapor Deposition)
Model	FR-G800
Chamber Configuration	Dual-chamber
Temperature Range	100–400 °C
Wafer Sizes Supported	2, 3, 4, 6, 8 inch
Discharge Methods	DC / AC / RF / Microwave / ECR
Typical Deposited Materials	Dielectric and optical thin films (e.g., SiOx, SiNx, low-k materials)
Primary Applications	Semiconductors, photonics, photovoltaics, biomedical devices

Key Features

Dual-Chamber Low-Temperature PECVD Deposition

A dual-chamber layout allows parallel processing and isolation between load/unload and process chambers, enabling continuous throughput while maintaining low-temperature deposition for thermally sensitive substrates.
Versatile Wafer Size Compatibility

Supports multiple wafer sizes (2, 3, 4, 6, 8 inches) to accommodate R&D and small-to-medium production runs across diverse semiconductor and photonics manufacturing workflows.
High-Quality Dielectric & Optical Films

Engineered for dense, low-defect dielectric and optical coatings, the system produces films with controlled thickness, uniformity, and material properties suitable for photonic devices, passivation, and encapsulation.
Comprehensive Plasma Control & Uniformity

Multiple discharge methods (RF, microwave, ECR, DC/AC) and precise process control deliver uniform plasma conditions for repeatable film stoichiometry, thickness control, and low defectivity across the substrate.
Low Thermal Budget, High Adhesion Performance

Low-temperature process capability minimizes thermal stress on substrates and components while maintaining film density and structural stability for temperature-sensitive substrates and complex layer stacks.
Scalable Design for Diverse Industries

Modular, dual-chamber architecture and adaptable process recipes support applications across semiconductors, photovoltaics, biomedical devices, and advanced optics with straightforward scalability.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

Energetic plasma species interact with surface molecules and contaminants under controlled vacuum conditions.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.