FR-G800 ICP Dual-Chamber Etcher

The FR-G800 ICP dual-chamber etcher produces high-density inductively coupled plasma for precise etching of silicon, oxides, III-V compounds and metals. It features load-lock isolation for safe wafer transfer and flexible gas and RF control for R&D and production.

High-density ICP for fast, uniform etching
Dual-chamber load-lock design for contamination control
Flexible RF and gas control for versatile processes

Get A Quote Tech Specs

Tech Specs

Chamber Configuration	Pre-vacuum (load lock) and reaction chamber (dual-chamber)
Plasma Generation	Inductively coupled plasma (ICP) combined with bias RF on lower electrode
Wafer Handling	Automated wafer transfer between pre-vacuum and reaction chambers
Vacuum System	Integrated high-vacuum pumping and control systems
Gas Delivery	Multi-channel process gas control system with mass flow control
Cooling	Integrated process cooling system for stable thermal control
Backside Control	Helium backside cooling control for wafer temperature and uniformity
Software & Controls	Operator software with process recipe management and monitoring
Materials Processed	Silicon, silicon oxide/nitride, metals, III-V compounds, polysilicon, MEMS substrates

Key Features

High-Density Inductively Coupled Plasma

Generates a high-density ICP to deliver rapid, uniform etch rates with strong ionization, enabling precise pattern transfer and improved selectivity across a wide range of semiconductor and material chemistries.
Dual-Chamber Load-Lock Design

Separate pre-vacuum (load lock) and reaction chambers minimize contamination and exposure, improving throughput and yield by allowing safe wafer transfer without venting the process chamber.
Independent RF Bias Control

Separate ICP and bias RF sources allow independent control of plasma density and ion energy, giving precise etch profile control, reduced damage, and adaptable recipes for various materials.
Advanced Gas Flow Management

Multi-channel gas delivery with mass flow control and accurate metering enables repeatable process chemistry, fast recipe switching, and fine control of etch selectivity and uniformity across substrates.
Integrated Thermal and Backside Control

Backside helium control combined with cooling system maintains uniform wafer temperature and prevents overheating, improving process stability and critical dimension control during long etch runs.
Automated Handling and Software Control

Automated wafer transfer and intuitive process software provide recipe management, real-time monitoring and diagnostics, simplifying operation and reducing operator intervention for consistent production.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

High-energy plasma species reach the material surface and interact with contaminants at the molecular level.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.