GD-20RF Plasma Asher

GD-20RF is a single-chamber plasma ashing system designed for photoresist stripping and organic residue removal in semiconductor and microfabrication processes. It delivers repeatable cleaning with recipe control, stable plasma output, and flexible gas chemistry to support sensitive films and complex structures.

Production-grade stripping for photoresist and organic residues with stable, repeatable results
Controlled process window to support sensitive layers while maintaining removal efficiency
Recipe-based PLC operation to standardize runs across operators and improve traceability
Strong capability on complex geometries where wet methods can struggle with coverage

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Tech Specs

Model	GD-20RF
Equipment Type	Plasma Asher
Chamber	Single chamber
Plasma Source	RF plasma
Process Gases	O₂, N₂, Ar, CF₄, H₂, mixed gases, custom
RF Power	TBD
Process Pressure	TBD
Temperature Control	TBD
Uniformity	TBD
Supported Substrates	TBD
Control System	PLC and touchscreen
Utilities	Power, compressed air, vacuum, process gas
Equipment Size	TBD

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Key Features

High-Rate Photoresist Stripping

Runs stable plasma ashing to remove photoresist and organic residues with repeatable performance for process workflows.
Controlled Cleaning for Sensitive Films

Supports a tunable process window to reduce risk on sensitive layers while maintaining stripping efficiency.
Recipe-Based PLC Operation

Uses PLC and touchscreen control for recipe setup, parameter management, and consistent results across shifts.
Flexible Gas Chemistry Options

Works with multiple gas choices and mixed recipes to match different resist types, residues, and film stacks.
Improved Coverage on Complex Structures

Helps treat 3D features and difficult geometries where wet stripping can suffer from diffusion and wetting limits.
Cleaner Process With Reduced Chemical Use

Uses a dry process approach that can reduce reliance on wet chemicals and simplify handling in many lines.

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Application

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

High-energy plasma species reach the material surface and interact with contaminants at the molecular level.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.