ICP CVD Dual-Chamber System

High-density ICP CVD dual-chamber system for deposition of SiN, SiO2 and a-Si films. Delivers uniform, reproducible thin films and advanced composite deposits for semiconductor, solar and related industries.

High-density ICP for uniform films.
Dual-chamber design for increased throughput.
Versatile deposition for SiN, SiO2, a-Si.

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Tech Specs

System Type	Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD)
Configuration	Dual-chamber design for parallel processing and higher throughput
Target Films	Silicon nitride (SiN), silicon dioxide (SiO2), amorphous silicon (a-Si) and composite deposits
Main Components	Reaction chambers, vacuum system, gas delivery system, RF power supply, and integrated control system
Plasma Source	Inductive RF excitation producing high-density plasma and abundant reactive species
Primary Functions	Thin film deposition, surface modification, and composite material growth via plasma-driven chemistry

Key Features

High-Density Plasma Generation

Inductively coupled RF source creates a high-density plasma that produces abundant reactive species, enabling fast, conformal deposition and excellent film quality across substrates.
Dual-Chamber Throughput Design

Dual-chamber architecture supports parallel processing or staged workflows to increase productivity while minimizing cross-contamination and downtime between runs.
Broad Material Compatibility

Engineered for SiN, SiO2, a-Si and specialty composite deposits, the system handles diverse precursor chemistries for semiconductor, photovoltaic and coating applications.
Integrated Vacuum And Gas Controls

Precision vacuum and gas delivery subsystems maintain stable process conditions and repeatability, ensuring uniform film thickness, stoichiometry and reduced defectivity.
Stable RF Power And Process Control

Robust RF power supply and closed-loop control enable consistent plasma conditions and repeatable deposition recipes for high-yield production and R&D tasks.
Application-Focused Flexibility

Modular design supports recipe customization and process tuning for applications ranging from semiconductor passivation to solar cell and composite material enhancement.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

High-energy plasma species reach the material surface and interact with contaminants at the molecular level.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.