ICP CVD Plasma Deposition System

A high-density ICP CVD plasma deposition system engineered for uniform, low-contamination thin film growth on wafers and substrates. Ideal for semiconductor, MEMS, and specialty coating applications requiring precise process control.

High-density ICP source for uniform films.
Integrated vacuum and process control system.
Flexible gas chemistries and substrate compatibility.

Get A Quote Tech Specs

Tech Specs

Wafer Size	Up to 200 mm (8 inch) substrates
Chamber Volume	Compact vacuum chamber suitable for single-wafer processing
ICP Power	0–2000 W (adjustable)
RF Bias Power	0–500 W (process bias control)
Process Pressure	0.1–100 Pa (≈0.75–750 mTorr)
Base Vacuum	< 5 × 10^-6 Torr
Temperature Range	Ambient to 400 °C (substrate heater)
Deposition Rate	Typical 5–200 nm/min (process dependent)
Uniformity	±3% across usable wafer area
Process Gases	SiH4, NH3, N2, O2, Ar and other specialty precursors
Control Interface	PLC with touchscreen and recipe management

Key Features

High-Density ICP Source

The inductively coupled plasma generator delivers a high-density, low-damage plasma to achieve uniform film deposition, excellent step coverage, and superior film quality across the substrate.
Precise Process Control

Advanced PLC and touchscreen recipe control allows tight regulation of power, gas flow, pressure, and temperature to reproduce complex deposition recipes and shorten process development time.
Low Contamination Design

UHV-capable chamber and optimized gas delivery minimize contamination and particle generation, ensuring high-yield production-ready films for sensitive semiconductor and MEMS applications.
Flexible Gas Chemistry

Supports a broad range of precursor gases and chemistries for depositing silicon, nitride, oxide, and specialty films, enabling rapid adaptation to R&D and production requirements.
Uniform Film Deposition

Engineered gas flow dynamics and ICP coupling ensure excellent across-wafer uniformity, delivering consistent thickness and material properties for high-reliability devices.
Integrated Substrate Heating

Built-in substrate temperature control up to 400 °C provides process stability and improved film properties while enabling deposition on diverse substrate materials.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

High-energy plasma species reach the material surface and interact with contaminants at the molecular level.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.