ICP Inductively Coupled Plasma Etcher

High-density ICP etcher designed for precise dry etching of oxides, nitrides, metals and compound semiconductors. Dual-chamber design minimizes exposure while ensuring safe, repeatable semiconductor processing.

High-density plasma for fast, uniform etching.
Load-lock and reaction chamber for contamination control.
Compatible with Si, SiO2, III-Vs and metals.

Get A Quote Tech Specs

Tech Specs

Model	FR-G200 (ICP)
Process Type	Inductively Coupled Plasma (ICP) dry etching
Chamber Configuration	Pre-vacuum (load-lock) and reaction (process) chamber
Power Sources	RF on lower electrode and inductive RF generator for plasma excitation
Vacuum System	Integrated vacuum pumps and controls for rapid pumpdown and stable base pressure
Gas Control	Multichannel process gas delivery with mass flow control
Cooling System	Integrated chiller for temperature control of chamber and components
Backfill / He Control	Helium backside control for wafer thermal management
Software & Control	Process recipe software with operator interface and automation support
Supported Materials	Si, SiO₂, SiC, poly-Si, III-V compounds, metals and other common semiconductor materials

Key Features

High-density Plasma Generation

ICP source produces a high-density plasma that enables rapid, anisotropic etching with excellent selectivity for a wide range of dielectric, semiconductor and metal films while maintaining uniformity across the wafer.
Dual-chamber Contamination Control

Separate pre-vacuum (load-lock) and reaction chambers minimize atmospheric exposure, reduce particle contamination and improve throughput by allowing wafer transfer without breaking the main process environment.
Precise Process Gas Delivery

Multichannel gas control with mass flow regulation ensures stable and repeatable gas mixtures for complex chemistries, improving etch profile consistency and reducing cycle-to-cycle variation.
Integrated Thermal Management

Backside helium control combined with dedicated cooling maintains wafer temperature during aggressive etch steps, ensuring dimensional control and reducing thermal-induced process drift.
Robust Vacuum and Pumping System

High-performance vacuum subsystem provides fast pump-down and stable process pressure control, critical for repeatable plasma conditions and consistent etch rates across production batches.
User-friendly Software Interface

Operator-focused control software supports recipe management, process monitoring and automation interfaces to simplify operation, reduce setup time and enable secure, repeatable manufacturing workflows.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

High-energy plasma species reach the material surface and interact with contaminants at the molecular level.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.