ICP Inductively Coupled Plasma Etcher

High-density ICP etching system designed for precision dry etching of oxides, nitrides, metals, and compound semiconductor materials. The dual-chamber architecture reduces atmospheric exposure while supporting stable and repeatable semiconductor manufacturing processes.

High-density plasma for fast, uniform etching.
Load-lock and reaction chamber for contamination control.
Compatible with Si, SiO2, III-Vs and metals.

Get A Quote Tech Specs

Tech Specs

Model	FR-G200 (ICP)
Process Type	Inductively Coupled Plasma (ICP) dry etching
Chamber Configuration	Pre-vacuum (load-lock) and reaction (process) chamber
Power Sources	RF on lower electrode and inductive RF generator for plasma excitation
Vacuum System	Integrated vacuum pumps and controls for rapid pumpdown and stable base pressure
Gas Control	Multichannel process gas delivery with mass flow control
Cooling System	Integrated chiller for temperature control of chamber and components
Backfill / He Control	Helium backside control for wafer thermal management
Software & Control	Process recipe software with operator interface and automation support
Supported Materials	Si, SiO₂, SiC, poly-Si, III-V compounds, metals and other common semiconductor materials

Key Features

High-density Plasma Generation

The ICP source generates high-density plasma for fast anisotropic etching with strong selectivity across dielectric, semiconductor, and metal films while maintaining uniformity across the wafer surface.
Dual-chamber Contamination Control

Separate pre-vacuum (load-lock) and reaction chambers minimize atmospheric exposure, reduce particle contamination and improve throughput by allowing wafer transfer without breaking the main process environment.
Precise Process Gas Delivery

Multichannel gas delivery with mass flow control provides stable and repeatable process gas mixtures for complex plasma chemistries, ensuring consistent etch profiles and process stability.
Integrated Thermal Management

Backside helium control combined with dedicated cooling maintains wafer temperature during aggressive etch steps, ensuring dimensional control and reducing thermal-induced process drift.
Robust Vacuum and Pumping System

High-performance vacuum subsystem provides fast pump-down and stable process pressure control, critical for repeatable plasma conditions and consistent etch rates across production batches.
User-friendly Software Interface

Operator-focused control software supports recipe management, process monitoring and automation interfaces to simplify operation, reduce setup time and enable secure, repeatable manufacturing workflows.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

Energetic plasma species interact with surface molecules and contaminants under controlled vacuum conditions.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.