The PD-200 ICP plasma residue removal system uses a 13.56 MHz RF source (2 kW) for efficient photoresist and residue ashing. Supports multi-wafer handling for 2/4" wafers, temperature control up to 250°C and tight uniformity ≤5%.
| Model | PD-200 |
| Plasma Source | RF 13.56 MHz |
| RF Power | 2 kW |
| Applicable Wafer Sizes | 2", 4", 6", 8" |
| Batch Handling | Multi-wafer (only for 2" and 4" wafers) |
| Dimensions (L×W×H) | 673 × 1455 × 1695 mm |
| Chamber Configuration | Transfer chamber + process chamber |
| Process Temperature Control | 50–250 °C |
| Uniformity | ≤5% (edge excluded 10 mm, 5-point measurement) |
| Plasma PR Removal | ≤90 °C; 50–100 nm/min; uniformity ≤5% (5-region test) |
| High-temperature Ashing | ≤250 °C; 3000–5000 nm/min; uniformity ≤5% (5-region test) |
| System Control | FR control system (FR system / FangRui) |
| Automation Level | Manual + semi-automatic |
| Electrode Cooling / Chiller | Electrode cooling FR-600A-H |
The PD-200 features a 13.56 MHz RF plasma source delivering up to 2 kW power, enabling rapid, controllable ashing rates from delicate low-temperature decontamination to aggressive high-temperature ashing.
Integrated temperature control spans 50–250 °C, supporting low-temperature photoresist removal and high-temperature ashing modes with consistent process stability and repeatable results.
Designed for multi-wafer processing (2" and 4"), PD-200 increases throughput for small-diameter production while maintaining process uniformity and minimal cycle-to-cycle variation.
Process uniformity is tightly controlled to ≤5% (measured 5 points, edge excluded), ensuring consistent residue removal and predictable device performance across repeated production runs.
The system uses a transfer chamber plus a dedicated process chamber to isolate handling and process steps, reducing contamination risks and improving process integration for fab environments.
Equipped with an FR control system, the PD-200 provides intuitive operation, recipe management and semi-automated workflows to streamline operator tasks and minimize setup errors.
Mox dicta finierat, multitudo omnis ad, quae imp erator voluit, promptior laudato consilio consensit in pacem ea ratione maxime percita, quod norat expeditionibus crebris fortunam
Gas is evaporated into plasma
High-energy ions are adsorbed on the surface
High-energy ions react with reactants to form product molecules
Product molecules decompose to form a gas phase
Auxerunt haec vulgi sordidioris a udaciam ob haec festinatis
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Rogatus ad ultimum admissusque in consistorium ambage nulla praegressa inconsiderate
