RIE Plasma Resist Stripping System

RIE Plasma Resist Stripping System delivers controlled, uniform plasma-based resist and contamination removal for semiconductor, medical, automotive and energy applications, improving surface cleanliness and adhesion.

Precision resist removal with RIE.
PLC + touch-screen control, intuitive operation.
Configurable gas recipes for diverse materials.

Get A Quote Tech Specs

Tech Specs

Chamber Size	Ø200 mm internal diameter (approx.)
RF Power Range	0 – 300 W, digitally adjustable
RF Frequency	13.56 MHz standard
Process Gases	O2, Ar, CF4, CHF3 (configurable mixtures)
Pressure Range	1 – 1000 mTorr (0.13 – 133 Pa)
Maximum Part Size	Up to 200 mm diameter or equivalent
Typical Cycle Time	Process-dependent; typical 1 – 15 minutes
Temperature Control	Ambient to 200 °C (optional heater)
Control System	Industrial PLC with color touch screen
Power Requirements	AC 220 V ±10%, 50/60 Hz, ~2 kVA
Dimensions (W×D×H)	800 × 700 × 1400 mm (approx.)
Weight	Approx. 150 kg

Key Features

Precision Plasma Resist Removal

Reactive ion etching (RIE) delivers controlled anisotropic plasma to efficiently remove photoresist and organic contaminants while preserving substrate integrity and minimizing damage.
Adjustable RF Power Control

Finely tunable RF power allows operators to optimize etch rates and selectivity for delicate semiconductor structures, enabling reproducible results across different process flows.
Multi-Gas Process Capability

Supports oxygen, argon and fluorinated gas chemistries and programmable gas recipes to tailor plasma chemistry for polymer stripping, surface activation and oxide etching tasks.
Low-Pressure Stable Operation

Wide pressure control range and stable vacuum regulation ensure uniform plasma density and repeatable processing for consistent surface treatment and high yield.
User-Friendly PLC Touch Interface

Integrated PLC with graphical touchscreen simplifies recipe management, real-time monitoring and alarm handling, reducing operator training time and process setup errors.
Compact Footprint, Easy Integration

Space-efficient cabinet design and standardized interfaces enable straightforward integration into existing production lines or R&D labs while maintaining service access.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

High-energy plasma species reach the material surface and interact with contaminants at the molecular level.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.