SD-300 ICP Photoresist Stripper

The SD-300 is an ICP-based photoresist stripper designed for high-efficiency removal of photoresist, organic residues and nanoscale contaminants in advanced semiconductor, packaging and display processes. It offers eco-friendly operation, flexible process control and high uniformity for reliable production.

High-efficiency ICP photoresist removal.
Wide wafer compatibility (2",4",6",8").
High-temperature ashing up to 250°C.

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Tech Specs

Model	SD-300
PlasmaSource	RF 13.56 MHz
RFPower	2 kW
WaferCompatibility	2, 4, 6, 8 inch
BatchProcessing	Multi-wafer (multi-wafer processing only for 2" and 4" wafers)
Dimensions	673 × 1455 × 1695 mm (L × W × H)
ChamberConfiguration	Load lock + process chamber
ProcessTemperatureRange	50–250 °C
Uniformity	≤5% (edge exclusion 10 mm, 5-point measurement, Max-Min/(2*mean))
LowTemperatureResistRemoval	Process temperature ≤90 °C, removal rate 50–100 nm/min, uniformity ≤5%, 5-area thickness test
HighTemperatureAshing	Process temperature ≤250 °C, removal rate 3000–5000 nm/min, uniformity ≤5%, 5-area thickness test
ControlSystem	FR system (FangRui)
AutomationLevel	Manual to semi-automatic
Chiller	Electrode cooling FR-600A-H

Key Features

Inductively Coupled Plasma Source

Uses a 13.56 MHz inductively coupled plasma source to generate a high-density, stable plasma ideal for efficient photoresist removal and fine contamination cleaning in sensitive semiconductor processes.
High RF Power Output

Delivers up to 2 kW RF power to enable rapid ashing and removal rates across a broad range of temperatures, supporting both low-temperature cleaning and high-speed high-temperature ashing workflows.
Wide Wafer Compatibility

Supports 2, 4, 6 and 8 inch wafers with multi-wafer handling for smaller diameters, enabling flexible production from research to pilot and volume manufacturing for various device types.
High-Temperature Ashing Capability

Capable of high-temperature ashing up to 250°C with removal rates of 3000–5000 nm/min, delivering fast throughput for tough resists while maintaining process uniformity and device integrity.
Precise Temperature Control

Process temperature control range of 50–250°C ensures consistent chemistry and thermal profiles across wafers, improving uniformity, repeatability and predictable resist removal performance.
Integrated Process Automation

Equipped with an FR control system and manual-to-semi-automatic operation modes, the unit supports operator-friendly workflows and integration into automated production lines where required.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

High-energy plasma species reach the material surface and interact with contaminants at the molecular level.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.