Single-Chamber PECVD Deposition System

Single-chamber PECVD system for low-temperature plasma-enhanced deposition of SiO2 and dielectric thin films. Optimized for high-quality, dense layers used in semiconductors, photovoltaics, and photonics.

Low-temperature deposition for temperature-sensitive substrates
High-quality SiO2 and dielectric film deposition
Single-chamber design with RF/Microwave/ECR plasma options

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Tech Specs

Process	Plasma Enhanced Chemical Vapor Deposition (PECVD)
Film Type	SiO2 and other dielectric thin films
Temperature Range	200-400 °C
Chamber Configuration	Single chamber
Plasma Sources	DC/AC, RF, Microwave, Electron Cyclotron Resonance (ECR)
Primary Applications	Semiconductors, photovoltaics, optoelectronics, biomedical

Key Features

Low-Temperature Deposition for Sensitive Substrates

Enables deposition at reduced temperatures (typically 200–400 °C), minimizing thermal stress on substrates and allowing processing of temperature-sensitive materials while maintaining film quality.
High Film Quality and Uniformity Control

Delivers dense, uniform dielectric and SiO2 films with controlled stoichiometry and low defects, improving device performance and reliability across large substrates and wafers.
Versatile Gas Chemistry and Process Flexibility

Supports a wide range of precursor gases and process recipes to tailor film composition, refractive index, and electrical properties for diverse applications from optics to microelectronics.
Single-Chamber Modular System Design

Compact single-chamber architecture simplifies integration, reduces footprint and contamination risk, and enables efficient throughput for R&D and pilot production environments.
Precise Thickness and Deposition Rate Control

Offers accurate control of deposition rate and film thickness through optimized RF/microwave power and gas flow management, ensuring repeatable thin-film stacks and critical layer tolerances.
Improved Adhesion and Film Density

Plasma activation and energetic species promote strong film adhesion and high density, enhancing mechanical stability and long-term performance of coated devices and components.

Plasma Cleaning Process

Plasma Generation

Process gas is energized and converted into a reactive plasma containing ions, electrons, and radicals.
Plasma–Surface Interaction

High-energy plasma species reach the material surface and interact with contaminants at the molecular level.
Chemical Reaction

Reactive ions and radicals break down organic residues and surface contaminants through controlled chemical reactions.
Volatilization

The reaction products are converted into volatile compounds and enter the gas phase.
Removal from Surface

Gaseous by-products desorb from the surface and are evacuated, leaving a clean, activated material surface.